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1

Porous Silicon: A Buffer Layer for PbS Heteroepitaxy

V. Yakovtseva, N. Vorozov, L. Dolgyi, V. Levchenko, L. Postnova, M. Balucani, V. Bondarenko, G. Lamedica, V. Ferrara, A. Ferrari

Journal:

physica status solidi (a)

Année:

2000

Langue:

english

Fichier:

PDF, 94 KB

english, 2000

2

Er-doped oxidised porous silicon waveguides

M Balucani, V Bondarenko, G Lamedica, A Ferrari, L Dolgyi, N Vorozov, V Yakovtseva, S Volchek, V Petrovich, N Kazuchits

Journal:

Thin Solid Films

Année:

2001

Langue:

english

Fichier:

PDF, 174 KB

english, 2001

3

Porous silicon as low-dimensional host material for erbium-doped structures

V. Bondarenko, L. Dolgyi, A. Dorofeev, N. Kazuchits, A. Leshok, G. Troyanova, N. Vorozov, G. Maiello, G. Masini, S. La Monica, A. Ferrari

Journal:

Thin Solid Films

Année:

1997

Langue:

english

Fichier:

PDF, 242 KB

english, 1997

4

Heteroepitaxy of PbS on porous silicon

V.I Levchenko, L.I Postnova, V.P Bondarenko, N.N Vorozov, V.A Yakovtseva, L.N Dolgyi

Journal:

Thin Solid Films

Année:

1999

Langue:

english

Fichier:

PDF, 194 KB

english, 1999

5

X-ray diffractometry of Si epilayers grown on porous silicon

G. Lamedica, M. Balucani, A. Ferrari, V. Bondarenko, V. Yakovtseva, L. Dolgyi

Journal:

Materials Science and Engineering: B

Année:

2002

Langue:

english

Fichier:

PDF, 97 KB

english, 2002

6

Bending properties in oxidized porous silicon waveguides

M Balucani, V Bondarenko, L Dolgyi, G Lamedica, A Ricciardelli, E Viarengo, N Vorozov, A Ferrari

Journal:

Materials Science in Semiconductor Processing

Année:

2000

Langue:

english

Fichier:

PDF, 320 KB

english, 2000

7

Fine structure of photoluminescence spectra from erbium incorporated with iron in oxidized porous silicon

V. Bondarenko, N. Kazuchits, S. Volchek, L. Dolgyi, V. Petrovich, V. Yakovtseva, P. Gaiduk, M. Balucani, G. Lamedica, A. Ferrari

Journal:

physica status solidi (a)

Année:

2003

Langue:

english

Fichier:

PDF, 128 KB

english, 2003

8

Investigation of Morphology of Porous Silicon Formed on N+ Type Silicon

G. Lamedica, M. Balucani, V. Bondarenko, L. Franchina, L. Dolgyi, V. Yakovtseva, A. Ferrari

Journal:

Journal of Porous Materials

Année:

2000

Langue:

english

Fichier:

PDF, 306 KB

english, 2000

9

Deposition of Erbium Containing Film in Porous Silicon from Ethanol Solution of Erbium Salt

V. Petrovich, S. Volchek, L. Dolgyi, N. Kazuchits, V. Yakovtseva, V. Bondarenko, L. Tsybeskov, P. Fauchet

Journal:

Journal of Porous Materials

Année:

2000

Langue:

english

Fichier:

PDF, 42 KB

english, 2000

10

Oxidized Porous Silicon: From Dielectric Isolation to Integrated Optical Waveguides

V. Yakovtseva, L. Dolgyi, N. Vorozov, N. Kazuchits, V. Bondarenko, M. Balucani, G. Lamedica, L. Franchina, A. Ferrari

Journal:

Journal of Porous Materials

Année:

2000

Langue:

english

Fichier:

PDF, 218 KB

english, 2000

11

Total gamma dose characteristics of CMOS devices in SOI structures based on oxidized porous silicon

Bondarenko, V.P., Bogatirev, Y.V., Colinge, J.P., Dolgyi, L.N., Dorofeev, A.M., Yakovtseva, V.A.

Journal:

IEEE Transactions on Nuclear Science

Année:

1997

Langue:

english

Fichier:

PDF, 104 KB

english, 1997

12

[IEEE 2010 3rd Electronic System-Integration Technology Conference (ESTC) - Berlin, Germany (2010.09.13-2010.09.16)] 3rd Electronics System Integration Technology Conference ESTC - Transfer layer technology for the packaging of high power modules

Balucani, Marco, Nenzi, Paolo, Crescenzi, Rocco, Dolgyi, Leonid, Klyshko, Alexey, Bondarenko, Vitaly

Année:

2010

Langue:

english

Fichier:

PDF, 1.95 MB

english, 2010

13

ECS Transactions [ECS 220th ECS Meeting - Boston, MA (October 9 - October 14, 2011)] - Electrochemical Deposition of Ni into Mesoporous Silicon

Dolgyi, Alexey, Bandarenka, Hanna, Prischepa, Serghej, Yanushkevich, Kazimir, Nenzi, Paolo, Balucani, Marco, Bondarenko, Vitaly

Année:

2012

Langue:

english

Fichier:

PDF, 666 KB

english, 2012

14

[IEEE Telecommunication Technology" (CriMiCo 2008) - Sevastopol, Ukraine (2008.09.8-2008.09.12)] 2008 18th International Crimean Conference - Microwave & Telecommunication Technology - Radiation stability of SOI and SOS CMOS LSI

Demchenko, A., Syakersky, V., Shvedov, S., Bondarenko, V., Dolgyi, L.

Année:

2008

Fichier:

PDF, 610 KB

2008

15

Technology and electric characteristics of the field-effect hall sensor based on SOI structure

Dolgyi, L. N., Lovshenko, I. Yu., Nelayev, V. V.

Journal:

Russian Microelectronics

Année:

2013

Langue:

english

Fichier:

PDF, 173 KB

english, 2013

16

Gettering Technology Based on Porous Silicon

Lamedica, G., Balucani, Marco, Ferrari, A., Bondarenko, V., Yakovtseva, V., Dolgyi, L.

Journal:

Solid State Phenomena

Année:

2002

Fichier:

PDF, 442 KB

2002

17

[IEEE 2012 IEEE 62nd Electronic Components and Technology Conference (ECTC) - San Diego, CA, USA (2012.05.29-2012.06.1)] 2012 IEEE 62nd Electronic Components and Technology Conference - High density compliant contacting technology for integrated high power modules in automotive applications

Nenzi, Paolo, Crescenzi, Rocco, Dolgyi, Alexander, Klyshko, Alexy, Bondarenko, Vitaly, Belfiore, Nicola Pio, Balucani, Marco

Année:

2012

Langue:

english

Fichier:

PDF, 1.10 MB

english, 2012

18

Gold in Flux-less Bonding: Noble or not Noble

Balucani, Marco, Nenzi, Paolo, Palma, Fabrizio, Bandarenka, Hanna, Dolgyi, Leonid, Shapel, Aliksandr

Journal:

MRS Proceedings

Année:

2011

Langue:

english

Fichier:

PDF, 637 KB

english, 2011

19

Humidity Sensor Based on Partially Oxidized Porous Silicon

Balucani, Marco, Bondarenko, V., Dolgyi, L., La Monica, S., Maiello, G., Masini, G., Yakovtseva, V., Ferrari, A.

Journal:

Solid State Phenomena

Année:

1997

Fichier:

PDF, 540 KB

1997

20

Formation Features of Deposits during a Cathode Treatment of Porous Silicon in Aqueous Solutions of Erbium Salts

Petrovich, V., Volchek, S., Dolgyi, L., Yakovtseva, V., Bondarenko, V., Balucani, M., Lamedica, G., Ferrari, A., Benson, T., Arrand, H.

Journal:

Journal of The Electrochemical Society

Année:

2000

Langue:

english

Fichier:

PDF, 172 KB

english, 2000

21

[IEEE 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings - Sinaia, Romania (9-12 Oct. 1996)] 1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings - Porous silicon based heterostructures: formation, properties, and application

Bondarenko, V.P., Bondarenko, A.V., Dolgyi, L.N., Dorofeev, A.M., Kazuchits, N.M., Levchenko, V.I., Vorozov, N.N., Volchek, S.A., Troyanova, G.N., Yakovtseva, V.A.

Année:

1996

Langue:

english

Fichier:

PDF, 533 KB

english, 1996

22

[WORLD SCIENTIFIC Proceedings of the International Conference on Nanomeeting 2009 - Minsk, Belarus (26 – 29 May 2009)] Physics, Chemistry and Application of Nanostructures - FEATURES OF THE NICKEL ELECTROCHEMICAL DEPOSITION INTO MESOPOROUS SILICON

DOLGYI, A., BALUCANI, M.

Langue:

english

Fichier:

PDF, 252 KB

english

23

Self-aligned oxidised porous silicon optical waveguides with reduced loss

Vorozov, N., Dolgyi, L., Yakovtseva, V., Bondarenko, V., Balucani, M., Lamedica, G., Ferrari, A., Vitrant, G., Broquin, J.E., Benson, T.M., Arrand, H.F., Sewell, P.

Journal:

Electronics Letters

Année:

2000

Langue:

english

Fichier:

PDF, 311 KB

english, 2000

24

Formation and Luminescent Properties of Oxidized Porous Silicon Doped with Erbium by Electrochemical Procedure

Bondarenko, V., Vorozov, N., Dolgyi, L., Yakovtseva, V., Petrovich, V., Volchek, S., Kazuchits, N., Grom, G., Lopez, H. A., Tsybeskov, L., Fauchet, P. M.

Journal:

MRS Proceedings

Année:

1998

Langue:

english

Fichier:

PDF, 1.33 MB

english, 1998